Tescan FIBSEM System

Description
The FIBSEM system is used to capture the microstructure image of materials.

Technical Specifications
Accelerating voltage: 0.5 to 30 kV
Resolution: 0.7 nm at 15 kV (SE), 0.9 nm at 1kV w/ deceleration (SE)
Magnification range: 20X to 2000X (low magnification), 100X to 2,000,000X (high magnification)
Detectors: Lower/ Upper/ Top, YAG BSE, STEM (Bright-Field/ PD-Dark Field), EDX
Stage traverse: (5-axis Motorized) X: 0 to 110 mm, Y: 0 to 11 mm, Z: 1.5 to 40 mm, R: 360Â°, T: -5Â° to +70Â°
Observable range: 150 mm diameter (max sample size)
Specimen exchange chamber size: 6 inch diameter
Electron gun: High brightness Schottky emitter
Resolution in standard mode (In-Beam SE): 0.7 nm at 15 kV, 1.4 nm at 1 kV, 1.7 nm at 500 V resolution in beam deceleration mode, 1.0 nm at 1 kV, 1.2 nm at 200 V
Magnification at 30 kV: 4x to 1,000,000x
Maximum field of view: 4.3 mm at WD analytical 5 mm; 7.5 mm at WD 30 mm
Electron beam energy: 200 eV to 30 keV / down to 50 eV with beam deceleration mode
Probe current: 2 pA to 400 nA
FIB resolution: <2.5 nm at 30 kV (at SEM-FIB coincidence point)
Magnification: minimum 150x at coincidence point and 10 kV (corresponding to 1 mm field of view), maximum 1,000,000x
Accelerating voltage: 0.5 kV to 30 kV
Ion gun: Ga liquid metal ion source

Model
Tescan Gaia3

Manufacturer
Tescan

Application
Focused ion beam in dual beam configuration with scanning electron microscope (FIB-SEM)

Special Remarks
Training is required – https://cde.nus.edu.sg/e6nanofab/what-we-offer/
Already open to External = NTU, SUTD and other higher learning institutions, A*STAR and DSO.

Location
E6NanoFab
College of Design and Engineering
Level 3 Metrology
5 Engineering Drive 1, Singapore 117608

Booking Information
Charges: https://cde.nus.edu.sg/e6nanofab/wp-content/uploads/2023/05/20230501_Web-Published-Price-List.pdf
Service or Self-operated: Self-operated
Website for booking: https://cde.nus.edu.sg/e6nanofab/fib-sem/

Key Contact(s)
Linn Linn
e6nanofab@nus.edu.sg