Description
The fully integrated MBE system allows deposition of hetero-structures and semiconductors. IV and II-VI group deposition chambers are integrated with transfer chamber and load lock. The system has 5 ports for each chamber.
Technical Specifications
Available material for Group IV: Si, C, Ge, Sn
Transition metal targets: Mo, W, Zr, Hf
Chalcogen targets: S, Se, Te
Base pressure: better than 5 x 10-10 Torr
Effusion cell for chalcogen material up to 1300°C (Si, Ge, Sn)
Electron beam gun for evaporation of carbon
Beam flux monitoring: Nude gauge type, 7.5 x 10-4 Torr to approximately 7.5 x 10-11 Torr
Substrate up to handle 2″ wafer
Heating up to 1000°C with heating rate up to 20°C per minute
Reflection High Energy Electron Diffraction (RHEED):
• Filament Hair pin type with Electron beam diameter 90 μm, 30 kV
• Fluorescent screen: 90 mm diameter, bakeable up to 200°C
Model
EW-100S
Manufacturer
ULVAC
Application
Material deposition
Special Remarks
Training is required – https://cde.nus.edu.sg/e6nanofab/what-we-offer/
Already open to External = NTU, SUTD and other higher learning institutions, A*STAR and DSO.
Location
E6NanoFab
College of Design and Engineering
Level 6 MBE Room
5 Engineering Drive 1, Singapore 117608
Booking Information
Charges: https://cde.nus.edu.sg/e6nanofab/what-we-offer/
Service or Self-operated: Service required/Self-operated
Website for booking: https://cde.nus.edu.sg/e6nanofab/molecular-beam-epitaxy-mbe-system-for-the-growth-of-a-range-of-group-iii-v-ii-iv-materials/
Key Contact(s)
Patrick Tang
e6nanofab@nus.edu.sg
CDE | Material Synthesis and Deposition | Materials | Equipment