Description
An ICP etch system that utilizes plasma generated by inductively coupled sources to precisely etch materials on substrates through ion bombardment, ensuring high precision and control.
Technical Specifications
Substrate: 100 mm wafer size
Chamber (AlMg) with Liner RF generator
Automatic single wafer vacuum load-lock
RF generator (RIE) /Substrate electrode: power 600 W; frequency 13.56 MHz
RF generator (ICP)/Upper electrode: power 2500 W; frequency 13.56 MHz
Model
SI 500
Manufacturer
SENTECH
Application
Pattern creation and surface treatment in micro-nano device fabrication
Special Remarks
Training is required.
Open to both NUS and external users.
Note that equipment is currently not available.
Contact Ngee Hong Teo (mtnh@nus.edu.sg) and Tiho (tiho@nus.edu.sg) to schedule a project meeting.
Location
Materials Science and Engineering, T11 Shared Facilities
Temasek Laboratories @ NUS
Level 11
5A Engineering Drive 1, Singapore 117411
Booking Information
Charges: This is not in public domain yet.
Service or Self-operated: Self-operated
Website for booking: N/A
Key Contact(s)
Jian Linke
linke@nus.edu.sg
CDE | Fabrication | Materials | Equipment