Description
Graphene CVD is a process used to produce high-quality graphene sheets. This technique involves depositing carbon atoms onto a substrate, typically copper, at high temperatures. A carbon-containing gas, such as methane, is introduced into a reaction chamber where it decomposes on the hot substrate, allowing the carbon atoms to arrange themselves into a single layer of graphene. This method is preferred for its ability to produce large-area graphene with excellent electronic properties, making it suitable for applications in electronics, sensors, and other advanced technologies.
Technical Specifications
Low pressure CVD
Standard Graphene growth on Cu
Gases: CH4, H2, Ar
Operating temperature: 1050°C
planarTECH | Furnace Lab
Model
N/A
Manufacturer
Graphene Platform Corporation
Application
Graphene CVD (Chemical Vapor Deposition) is used to produce high-quality, large-area graphene films for applications in electronics, sensors, and energy storage devices
Special Remarks
Open to both NUS and external users.
Contact Ngee Hong Teo (mtnh@nus.edu.sg) and Tiho (tiho@nus.edu.sg) to schedule a project meeting.
Location
Materials Science and Engineering, T11 Shared Facilities
Temasek Laboratories @ NUS
Level 11
5A Engineering Drive 1, Singapore 117411
Booking Information
Charges: This is not in public domain yet.
Service or Self-operated: Self-operated
Website for booking: N/A
Key Contact(s)
Tihomir Marjanovic
tiho@nus.edu.sg
CDE | Material Synthesis and Deposition | Materials | Equipment