E-beam Lithography (Raith)

Description
This is a fast, high-resolution, automated wafer and multi-sample exposures electron beam lithography tool.

Technical Specifications
Beam energy: 50, 100 kV
Beam current: 50 pA to 200 nA
Max substrate/wafer size: 200 x 200 mm
Max writing speed: 125 MHz
Resolution: 7 nm
In-plane correction and overlay alignment level: Full automation and easy operation

Model
EBPG 5200

Manufacturer
RAITH BV

Application
Nanolithography and fabrication

Special Remarks
Training is required – https://cde.nus.edu.sg/e6nanofab/what-we-offer/
Already open to External = NTU, SUTD and other higher learning institutions, A*STAR and DSO.

Location
E6NanoFab
College of Design and Engineering
Level 1 Class 10 Cleanroom
5 Engineering Drive 1, Singapore 117608

Booking Information
Charges: https://cde.nus.edu.sg/e6nanofab/wp-content/uploads/2023/05/20230501_Web-Published-Price-List.pdf
Service or Self-operated: Self-operated
Website for booking: https://cde.nus.edu.sg/e6nanofab/raith-ultra-high-performance-electron-beam-lithography/

Key Contact(s)
Manohar Lal
elemal@nus.edu.sg


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