Description
The CMP system is used for metal and dielectric planarization such as Cu Al, SiO2, SiN. It is able to accommodate polishing for coupon size up to 2 cm as well as wafer size up to 8 inches, with a finishing surface roughness of 1 nm.
Technical Specifications
Metal and dielectric planarization (Cu Al, SiO2, SiN…)
Within wafer non-uniformity 5%
Run to run non-uniformity 5%
Finishing surface roughness 1 nm
Model
Logitech Orbis
Manufacturer
Logitech
Application
Metal and dielectric planarization (Cu Al, SiO2, SiN..)
Special Remarks
Training is required – https://cde.nus.edu.sg/e6nanofab/what-we-offer/
Already open to External = NTU, SUTD and other higher learning institutions, A*STAR and DSO.
Location
E6NanoFab
College of Design and Engineering
Level 1 Class 10 Cleanroom
5 Engineering Drive 1, Singapore 117608
Booking Information
Charges: https://cde.nus.edu.sg/e6nanofab/wp-content/uploads/2023/05/20230501_Web-Published-Price-List.pdf
Service or Self-operated: Self-operated
Website for booking: https://cde.nus.edu.sg/e6nanofab/chemical-mechanical-planarization/
Key Contact(s)
David Xu Baochang
e6nanofab@nus.edu.sg
Chua Kut Tiong
kt.chua@nus.edu.sg
CDE | Fabrication | Materials | Equipment