Description
This system is used for the atomic layer deposition (ALD) of metal nitrides, oxides and sulphides with thermal and plasma processes.
Technical Specifications
High-vacuum ALD system
Accommodate up to 8″ wafer
Plasma reactor and thermal rector with load-lock, base pressure 5 x 10-6 Torr, substrate temperature 500°C
Model
R200 Adv
Manufacturer
Picosun
Application
Deposition
Special Remarks
Training is required – https://cde.nus.edu.sg/e6nanofab/what-we-offer/
Already open to External = NTU, SUTD and other higher learning institutions, A*STAR and DSO.
Location
E6NanoFab
College of Design and Engineering
Level 1 Class 10 Cleanroom
5 Engineering Drive 1, Singapore 117608
Booking Information
Charges: https://cde.nus.edu.sg/e6nanofab/wp-content/uploads/2023/05/20230501_Web-Published-Price-List.pdf
Service or Self-operated: Service required/Self-operated
Website for booking: https://cde.nus.edu.sg/e6nanofab/atomic-layer-deposition-ald/
Key Contact(s)
Lin Zhong Guan
e6nanofab@nus.edu.sg
Htike Aung
htikeaung@nus.edu.sg
CDE | Fabrication | Materials | Equipment