Description
This system uses close proximity physical vapour deposition with magnetron technology. The target-to-substrate distance is adjustable between 50-100 mm. The system accepts 3” diameter target size, various sample sizes and a maximum of 8” wafer.
Technical Specifications
Substrate temperature up to 800°C on substrate, capable of being heated in an O2 environment
PID temperature controller for substrate with +/- 1°C stability
DC sputter power up to 1500 W, RF sputter power up to 600 W@ 13.56 mHz
Substrate RF bias 110W@ 13.56 mHz with rotation
Substrate carrier 3″ working distance adjustment (incident ion energy from 50 eV to 300 eV)
Process gases, Ar, N2, O2, Metallic, oxide and composite targets
Uniformity: RF sputtering SiO2 and reactive sputtering TiN: 6″ wafer 1.5%, 8″ wafer 5%
Model
AJA ATC-2200
Manufacturer
AJA International, Inc
Application
• DC and RF sputtering
• RF substrate bias cleaning with rotation and Confocal sputtering
Special Remarks
Training is required – https://cde.nus.edu.sg/e6nanofab/what-we-offer/
Already open to External = NTU, SUTD and other higher learning institutions, A*STAR and DSO.
Location
E6NanoFab
College of Design and Engineering
Level 1 Class 100 Cleanroom
5 Engineering Drive 1, Singapore 117608
Booking Information
Charges: https://cde.nus.edu.sg/e6nanofab/wp-content/uploads/2023/05/20230501_Web-Published-Price-List.pdf
Service or Self-operated: Service required/Self-operated
Website for booking: https://cde.nus.edu.sg/e6nanofab/ultra-high-vaccum-metal-and-dielectric-sputtering/
Key Contact(s)
Lin Zhong Guan
e6nanofab@nus.edu.sg
Htike Aung
htikeaung@nus.edu.sg
CDE | Fabrication | Material Synthesis and Deposition | Materials | Equipment